An infinite dimensional affine nil algebra with finite Gelfand-Kirillov dimension

The famous 1960's construction of Golod and Shafarevich yields infinite dimensional nil, but not nilpotent, algebras. However, these algebras have exponential growth. Here, we construct an infinite dimensional nil, but not locally nilpotent, algebra which has polynomially bounded growth.

     

The Elimination of Grains and Grain Boundaries in Grain Growth

The topological changes that occur during coarsening of 2D and 3Dcellular structures, such as polycrystals, areinvestigated. Particular attention is given to the elimination ofgrain boundaries and grains with more than the minimum number oftopological elements. A thermodynamic criterion is introduced tofind out which topological transformations are favoured, based on theevaluation of the Gibbs free energy of the initial and finalconfigurations. In general, elimination of grains is possible only ifthe number of their neighbours is below a critical value, which maybe affected by geometry.     

Study on the dispersion characteristic of the plasma-loaded relativistic BWO

The dispersion characteristic of the plasma-loaded relativistic backward wave oscillator has been analyzed. The theoretical model has been established and the numerical calculations accord with the experimental results, which provides some useful suggestions on the designing of slow-wave structure of BWO.     

具有新光学性质的Zn-Zn2SiO4纳米同轴线阵列

采用气相沉积技术在Si衬底上生长了Zn-Zn₂SiO₄芯-壳结构纳米同轴线阵列。根部呈笋状的纳米同轴线,直径约100nm,长度可以超过10μm;同轴线芯直径约50nm、壳层厚约25nm。通过X射线衍射的表征以及能量色散谱的线扫描,确定纳米同轴线的芯为Zn,壳层为Zn₂SiO₄。我们提出了一种新的生长机制,同时也为生长均匀的纳米同轴线提供一种新的技术。观察阴极荧光谱发现,纳米同轴线有三个主要发光带:强度最大的中紫外300nm发光、较弱的可见光区560nm以及红外谱区865nm的发光。对纳米同轴线截面的300nm发光峰观测发现,中紫外发光来源于Zn₂SiO₄壳层。正是这种同轴线的结构,使得其具备特殊的光学性质。     

Monte Carlo simulation of grain growth in polycrystalline materials

Understanding the kinetics of grain growth, under the influence of second phase (such as impurities, voids and bubbles) is fundamental to advances in the control of microstructural evolution. As a precursor to this objective, we have investigated the grain growth kinetics in a polycrystalline material using a standard Q-state Potts’ model under Monte Carlo settings. Based on physical reasoning, new modifications are suggested to circumvent some of the disadvantages in the basic Potts model. The efficacy of these modifications vis-à-vis the basic model is verified. The influence of second phase particles on the impurity loaded grain boundaries is investigated for the study of grain growth kinetics.     

分子束外延生长赝配高电子迁移率超高速微结构功能材料里深中心识别

应用深能级瞬态谱(DLTS)技术研究分子束外延(MBE)生长的highelectronmobilitytransistors(HEMT)和Pseudomorphichighelectronmobilitytransistors(PHEMT)结构深中心行为.样品的DLTS谱表明,在HEMT和PHEMT结构的nAlGaAs层里存在着较大浓度(1015-1017cm-3)和俘获截面(10-16cm2)的近禁带中部电子陷阱.它们可能与AlGaAs层的氧含量有关.同时还观察到PHEMT结构晶格不匹配的AlGaAsInGaAsGaAs系统在AlGaAs里产生的应力引起DX中心(与硅有关)能级位置的有序移动.其移动量可作为应力大小的一个判据,表明DLTS技术是定性识别此应力的可靠和简便的工具. 关键词： 分子束外延生长 高电子迁移率超高速微结构功能材料 深中心     

Well-posedness of a multidimensional free boundary problem modelling the growth of nonnecrotic tumors

In this paper we study a free boundary problem modelling the growth of nonnecrotic tumors. The main trait of this free boundary problem is that it is essentially multidimensional, so that its well-posedness is hard to establish by using the usual methods in the classical theory of free boundary problems. In this paper we use the functional analysis method based on the theory of analytic semigroups to prove that this problem has a unique local solution in suitable function spaces. Continuous dependence of the solution on the initial data and regularities of the solution can also be easily obtained by using the argument of this paper.     

生长曲线模型中回归系数阵的极大似然估计的精确分布

对于生长曲线模型,基于理论发展和应用效果的考虑,本文引入了Gauss型误差．在此误差下,本文研究了模型中回归系数阵的极大似然估计的精确分布,求出了此分布的密度和特征函数．     

经济增长与宏观经济运行模型

对国民经济进行宏观调控，如同经济增长问题一样是一个永恒问题，对宏观调控的基本内容，手段，方法，国内外学者已进行了较多的规范性讨论，尤其是在数理分析方面，也已有许多具有普遍意义的成果，但是，要把那些成果转化为“生产力”从而变成清晰的，简明的，可操作的手段和方法，尚需人们不断的探索，本文通过对国民经济运行过程中若干宏观经济变量之间的数量关系分析，并以此建立了的国民经济宏观数量模型，就是尝试性的探索。